A Silicon Nanowire Ferroelectric Field‐Effect Transistor

P-Type Silicon Nanowire Transistor Modeling

The presented model based on the quantum confinement and high electric filed effect illustrates velocity approach to the modeling of a P-type silicon nanowire transistor. It has been clarified that the intrinsic velocity of nanowire and other hetero-structure field-effect transistors (FETs) is governed by the transit time of holes (electrons). The length of the channel for ballistic channel is ...

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

A Silicon Optical Transistor.

We demonstrate an all-optical transistor with the modulated output signal simultaneously having an output/input ratio > 3 dB and ON/OFF ratio > 20 dB. The microring based device is ultra-compact and CMOS compatible.

A programmable ferroelectric single electron transistor

Study the Effect of Silicon Nanowire Length on Characteristics of Silicon Nanowire Based Solar Cells by Using Impedance Spectroscopy

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...